The Probus-SiC™ is an automated SiC epitaxial film growth equipment. It is possible to install up to two semi-batched wafer process modules on the platform, and to select the equipment configuration according to the purpose from development to mass production.

Probus-SiC™は、3/4/6インチSiC基板対応のSiCエピタキシャル成膜装置です。 ウェーハの複数搭載が可能なセミバッチ方式のプロセスモジュールを2基搭載する拡張性を持ち、開発から量産まで目的に合わせた装置構成を選択することが可能です。 また、ウェーハサイズの変更はホルダと呼ばれるトレーを変更する簡易な方式で、ウェーハの大口径化にも効率的に対応します。 進化を続けるSiC市場では、より高いデバイス性能が求められており、欠陥の少ない、均一性の …

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Probus-SiC™ Epitaxial reactor to grow SiC on 75-150mm substrates used in SiC power semiconductor devices. Incorporating state-of-the-art technologies such as high temperature control under vacuum achieves excellent uniformity in thickness and dopant concentration.

Since its release in 2006, the system has been offering consistently high reliability and productivity, attaining the world's top levels in wafer transfer speeds and footprint. Gas chemical etch system for 300mm wafers.

March 16, 2012 — Infineon Technologies (Germany) ordered the Probus-SiC silicon carbide (SiC) epitaxy film growth tool from Tokyo Electron Limited (TEL). It will be used to mass produce advanced SiC power devices .

In Japan, Tokyo Electron Limited (TEL) has the Probus CVD system for SiC epitaxy on substrates up to 6-inch diameter. The system can be configured with two process chambers. An auto-loader can also be added. Infineon bought a TEL tool in early 2012 for mass pro-duction of advanced SiC power devices. Epitaxy and substrate producer

Tokyo Electron Ltd (TEL) says that Germany’s Infineon Technologies has ordered its Probus-SiC silicon carbide epitaxial film growth system for the mass production of SiC power devices. The Probus-SiC can handle film growth on substrates up to 6 inches in diameter.