News
Tech Xplore on MSN10d
Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
The Brighterside of News on MSN13d
Groundbreaking crystal oxide transistors are faster, smaller and more reliable than siliconShrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th ...
Troubled Chipzilla is trying to shift attention from looming layoffs to technical progress, unveiling more details about its ...
These polarity-configurable thin-film transistors (PC-TFTs) enable flexible, adaptive CMOS circuits suitable for wearables, ...
Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...
Axcelis leverages ion implantation expertise to thrive in the semiconductor sector. Read more about ACLS stock's 65% upside ...
A non-destructive method for examining nanosheet deformations using X-rays enhances understanding of nanoscale electronics ...
Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...
Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback