Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...

Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...

Troubled Chipzilla is trying to shift attention from looming layoffs to technical progress, unveiling more details about its ...

These polarity-configurable thin-film transistors (PC-TFTs) enable flexible, adaptive CMOS circuits suitable for wearables, ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

Elaborating on a Flip ON Flop OFF circuit with a circuit that allows for a multi-state 10-position switch or a DAC.

Understand the essential aspects of gate drivers. This post covers unique issues related to gate driver dc-dc converters.

GaN-on-Si is considered the best of both worlds marrying the high performance for GaN transistors with the scalability and cost-effective platform of silicon. However, it is a challenging design due ...

Abstract: Capacitor-based analog synaptic circuit arrays proposed so far typically required more than three transistors per synapse to enable selective updates for ...

Colby Hobart, RF Applications Engineer at Printed Circuits, discusses how the company is innovating the design of circuits using new materials at IMS 2025 in San Francisco.