A 40–110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, ...

A G-Band single pole single throw (SPST) switch for low insertion loss and high isolation is proposed and fabricated using 65-nm CMOS technology. A grounded co-planar wave guide (GCPW) folded coupled ...