V, 20-A SiC Schottky diodes contribute to high-efficiency power conversion in AI server infrastructure and solar inverters.

Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its ...

Vishay Intertechnology announces three new high-performance silicon carbide Schottky diodes, enhancing efficiency in power applications.

Samples and production quantities of the new SiC diodes are currently available with lead times of 14 weeks. In other recent news, Vishay Intertechnology reported its first-quarter earnings for ...

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

In this article, a trench Schottky barrier diode (SBD) structure based on a wide bandgap, high temperature, and irradiation resistant 4H-SiC material is innovatively proposed, and the neutron ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

The detector plays a crucial role in terahertz (THz) receiving systems, converting weak high-frequency signals into low-frequency or direct current signals that are easier to process. This paper ...

The basic circuit is a Schottky diode detector between an antenna and a high-gain audio amplifier driving high-impedance headphones; [Ido] built a variation that also has an LM386 amplifier stage ...