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With technology node scaling down to 5 nm, the narrow device geometry confines the material thermal conductivity and further aggravates the self-heating effect in gate-all-around (GAA) transistors. In ...

The total-dose response of gated lateral PNP transistors is presented for the first time for the various enhanced low-dose-rate sensitivity (ELDRS)-related test conditions of Mil-STD 883F Test Method ...