In this paper, we developed a 0.6 ㎛ pixel with full well capacity (FWC) of 10,000e-using dual vertical transfer gate (D-VTG) technology. FWC of D-VTG increased by 60% compared to single vertical ...

Gate-All-Around Field Effect Transistors (GAAFETs) for the future technology nodes will have highly confined channel cross-sections. Effects like subband separation and geometry dependent density of ...