Here, a triangular barrier designed Silicon NIPIN (n+ -i-p+ -i-n+) punch-through diode with variable voltage <0.5V to 2V is proposed for low-voltage system level ESD protection. The NIPIN diode ...

In this paper, we propose a double diode network including an additional stacked diode, which provides robustness against Electrostatic discharge (ESD) and high-frequency interference signals. The ...