A new electrostatic discharge (ESD) protection design by using only 1timesVDD low-voltage devices for mixed-voltage I/O buffer with 3timesVDD input tolerance is proposed. A special ESD detection ...

A unique three-step short-circuit protection method is proposed for the 650-V enhancement mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method can quickly detect the ...