Kioxia's UFS 4.1 memory devices are developed to meet the demands of next-generation mobile applications, including smartphones with on-device AI.

KIOXIA-powered UFS Ver. 4.1 devices incorporate the company's latest 8th generation BiCS FLASH 3D flash memory, which introduces CBA (CMOS directly Bonded to Array) technology to boost power ...

We present PLC (Penta-level cell, 5 bits/cell) NAND flash memory using 3D charge-trap-flash (CTF) cell. To achieve PLC cell distribution with proper cell read m ...

These new UFS devices are built with KIOXIA's 8th generation BiCS FLASH 3D flash memory 2. This generation introduces CBA (CMOS directly Bonded to Array) technology - an architectural innovation that ...

Abstract: In this paper, we propose a novel String-Select-Line Separation Patterning (SSP) scheme designed for low voltage and high-speed program operation in 3D NAND flash memory structures with a ...

Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers ...

Seoul National University College of Engineering announced that a research team has developed a new hardware security technology based on commercially available 3D NAND flash memory (V-NAND flash ...

AI chatbot codes browser-based apps from plain English with classic web vibes.