This amorphous phase changes to the hexagonal phase upon alumina encapsulation. A 4-nm-thick Te transistor with a PO of 7% exhibits outstanding device performances, with a field-effect mobility up to ...

In this work a transistor, capacitor and resistor based nanosecond UWB pulse generator is simulated using Multisim and integrated in the breadboard. The impulse generating circuit is fed by shape ...

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