If transistor switching circuits are to have response times limited by the bandwidths of the transistors operating as amplifiers and by diffusion or transit time delay, it becomes necessary to avoid ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

The low-cost, scalable technology enables seamless integration of high-speed gallium nitride transistors onto a standard ...

Abstract: Molecular-beam epitaxy (MBE) and ion implantation were used to fabricate GaAs/AlGaAs heterojunction bipolar transistors with buried wide bandgap emitters. Inverted-mode current gains of ∼ ...