This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz waves for nanometer-scale resolution.

Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against ...

One of the more significant uses of the p-n junction variable capacitor is as a high-frequency (> 100 mc) tuning element. Structures which have been available have had rather low Q at these ...

In this paper, we present the design of a 110-GHz on-chip antenna-coupled power-adjustable tripler based on the Schottky diodes. The design integrates two frequency triplers, on-chip antenna, and ...

Programmable and nonvolatile Schottky junctions are highly desirable for next-generation electronic and neuromorphic systems. However, conventional metal–semiconductor and even van der Waals (vdW) ...