In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs ...

Benefiting from the gate-tunable and polarization-sensitive attributes of the photodetector, the research demonstrates the induction of optoelectronic reversal for both positive and negative values, ...

EPC Space, a maker of radiation-hardened GaN power devices, has announced the EPC7C021, a three-phase motor demonstration ...

Here is how to explore real-time controllers and create better robots. Robotics is a resource-intensive field, especially ...