IGBT-based inverter design revolutionises furnaces . Name & Surname: Your Email: Telephone: Your Enquiry: Verification: Email This Article. To: separate emails by commas, maximum limit of 4 addresses.

The CID150660 power switch and diode combination pack (co-pack) incorporates a 6-A, 600-V Cree silicon carbide Schottky diode along with a 15-A silicon insulated gate bipolar transistor (IGBT ...

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of two innovative IGBT and MOSFET drivers, the VOFD341A and VOFD343A, housed in a compact, high isolation ...

Semikron has added a new topology for use in three-level inverters to its Semitop IGBT product range. The topology is designed to integrate IGBT technology with lower switching and conduction losses ...

Compared with an existing product, the new LV100-type 1.2-kV module with an eighth-generation IGBT chips reduce power loss by approximately 15% in inverters used in solar power-generation systems ...

Toshiba has announced an opto-isolated IGBT pre-driver IC for automotive inverters within electric and hybrid vehicles. Called TB9150FN, it includes a number of protection functions. with various ...

Toshiba launches an opto-isolated IGBT gate pre-driver IC with various enhanced protective functions for the in-vehicle inverters of electric and hybr.

IGBT and Super Junction MOSFET Sales to Rise at 17.2% CAGR Through 2033 Amid Rising Applications in USPs, Wind Turbines, and Electric VehiclesNew York, Feb. 27, 2023 (GLOBE NEWSWIRE) -- The global ...

The FMG2G50US120 and FMG2G75US120 from Fairchild Semiconductor are 1200-V, 50-A and 75-A rated IGBT modules. With optimized on-state loss (VCE(sat)) ...