Here, a triangular barrier designed Silicon NIPIN (n+ -i-p+ -i-n+) punch-through diode with variable voltage <0.5V to 2V is proposed for low-voltage system level ESD protection. The NIPIN diode ...

This study investigates the impact of electrostatic discharge (ESD) protection on the performance of I/O circuits in 2.5D-chiplet and 3D integrated architectures, focusing on 12-nm FinFET devices.