Distributor Richardson Electronics has announced a technology partner agreement with Pakal Technologies, a US-based silicon ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching ...

A silicon carbide MOSFET half-bridge module is fabricated with 1200V devices from wolfspeed. The gate drivers and the decoupling capacitors are integrated in this module. The layout of the direct ...