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Take advantage of current control topologies without self-heating error while retaining the 317/337's fault protection ...
Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were ...
Researchers at the University of California, Riverside, have uncovered how to manipulate electrical flow through crystalline ...
This paper presents a new power-reduction scheme using a back-gate-controlled asymmetrical double-gate device with robust data-retention capability for high-performance logic/SRAM power gating or ...
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