Focusing on internal high-voltage (V/sub pp/) switching and generation for low-voltage NAND flash memories, this paper describes a V/sub (pp)/ switch, row decoder, and charge-pump circuit. The ...

As electronic devices become more advanced, integrating complex logic into a single component becomes essential. Enter AND6, ...

A planar floating-gate NAND technology has previously realized a 0.87Gb/mm2 memory density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the development of planar NAND ...

MP Board Result 2019: Class 12 th The Madhya Pradesh Board of Secondary Education (MPBSE) is going to announce the results of Class 12 examinations today (Wednesday, 15 May at 11 am). Candidates who ...

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