A new device design in trench-gate insulated gate bipolar transistor (IGBT) with dual gate control is proposed for high switching controllability with low loss operation. Injection enhancement effect ...

We propose a low area overhead and power-efficient asynchronous-logic quasi-delay-insensitive (QDI) sense-amplifier half-buffer (SAHB) approach with quad-rail (i.e., 1-of-4) data encoding. The ...