This paper advocates a lifetime-aware progressive programming concept to improve single-level per cell NAND flash memory write endurance. NAND flash memory program/erase (P/E) cycling gradually ...

A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies are suggested to resolve the issues. For ...

The flash space of the V003 (and the V002) is limited to 16kB, which is filled easily, even if only using a few of the peripherals and a little bit of custom code. Having insufficient room severely ...

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