Researchers at Northeastern University have discovered how to change the electronic state of matter on demand, a breakthrough ...

A small-signal equivalent circuit is developed for the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT). Device S-parameters are measured in the 0.05- GHz to 40-GHz range at ...

If transistor switching circuits are to have response times limited by the bandwidths of the transistors operating as amplifiers and by diffusion or transit time delay, it becomes necessary to avoid ...

When electronic devices overheat, they can slow down, malfunction, or stop working altogether. This heat is mainly caused by ...

Gallium nitride, a semiconductor renowned for its efficiency and high-speed capabilities, has long been recognized as a ...

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...