Amorphous indium-gallium-zinc oxide-based synaptic transistors with hafnium oxide (HfOx) insulating layer were fabricated to mimic synaptic long-term depression (LTD) characteristics. The fabrication ...

We demonstrate the hardware implementation of spiking neural network (SNN) with synaptic transistors and neuron circuits. The method of conversion from software fully-connected network (FCN) to ...