The D-band (110 - 170 GHz) waveguide-based zero-bias Schottky diode (ZBD) power detector is reported. The design aims to get high responsivity across the band. The circuit is fabricated on a 50 μm ...

The design and experimental characterization of a high-resolution analog lock-in amplifier (LIA)-based measurement system is presented in this paper. Different design strategies are used to attain a ...

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga2O3 wafers with low doped epitaxial layers of 7.0 × 1015 cm−3. Circular Ni Schottky contacts with area 2 mm2 were deposited by electron ...