In this letter, we report experimental results for a 3.3 kV class 4H-SiC double-implanted MOSFET (DMOSFET) that provides excellent radiation hardness against gamma rays using the counter-doped ...

The CML based (triple tail and folded) D flipflop and conventional NAND based D-flipflop are implemented at 45 nm technology with a comparative analysis with respect to power and propagation delay. It ...