They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement ...

The output module's indicator functions in a similar fashion to the input module's indicators. When on, the logic LED indicates that the module's circuitry has acknowledged a command from the ...

At the same time the output amplitude changes from 1.28 Vpp to 0.68 Vpp. The output shows around ~1% distortion (Figure 3). Figure 3 The scope image shows the oscillator output at circa 1 kHz. A ...

Output voltage response (V out-ΔT and V out-V in) of a resistor-loaded inverter based on a heat-gated transistor for V DD =−1.2 V and temperature gradient −32 K<ΔT<30 K or supply input ...

Imec has announced a significant breakthrough in mobile RF transistor performance with a GaN-on-silicon enhancement-mode ...

Toshiba has launched the TBD62064A series and TBD62308A series of highly efficient transistor arrays, featuring a DMOS FET type sink- output driver. These devices are claimed to be the industry’s ...

TLX9188’s high voltage photo transistor delivers a collector-emitter voltage rating of 200V, 2.5 times higher than Toshiba’s current TLX9185A, a first for the company [1].

Furthermore, the key challenges in fabricating the GAAFETs are illustrated detailly, including high-quality GeSi/Si superlattice periodic epitaxy, channel release, inner spacer module, SD ...

The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET.

Designed to serve as an output stage in power amplifiers, the NES1720P-140 partially matched, twin transistor L-Band GaAs MESFET delivers 140W of output power. The device also ...

Fig. 2 - The SiC six-pack power module is housed in a standard 45 mm package. This module can reduce power losses by 75 percent, compared with a functionally similar silicon MOSFET module.