They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement ...

Imec has announced a significant breakthrough in mobile RF transistor performance with a GaN-on-silicon enhancement-mode ...

GaN-on-Si is considered the best of both worlds marrying the high performance for GaN transistors with the scalability and cost-effective platform of silicon. However, it is a challenging design due ...

Furthermore, the key challenges in fabricating the GAAFETs are illustrated detailly, including high-quality GeSi/Si superlattice periodic epitaxy, channel release, inner spacer module, SD ...

GREENSBORO, N.C., Aug. 10, 2017 (GLOBE NEWSWIRE) -- Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, ...

Output voltage response (V out-ΔT and V out-V in) of a resistor-loaded inverter based on a heat-gated transistor for V DD =−1.2 V and temperature gradient −32 K<ΔT<30 K or supply input ...

Toshiba has launched the TBD62064A series and TBD62308A series of highly efficient transistor arrays, featuring a DMOS FET type sink- output driver. These devices are claimed to be the industry’s ...

TLX9188’s high voltage photo transistor delivers a collector-emitter voltage rating of 200V, 2.5 times higher than Toshiba’s current TLX9185A, a first for the company [1].

The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET.

Designed to serve as an output stage in power amplifiers, the NES1720P-140 partially matched, twin transistor L-Band GaAs MESFET delivers 140W of output power. The device also ...

Toshiba: “TBD62064AFG”, a DMOS FET transistor array with industry’s first 1.5A sink-output driver. (Photo: Business Wire) Mass production of TBD62064A series products is scheduled to start ...