Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. www.imec-int.com, Jun. 12, 2025 – . LEUVEN (Belgium), June 12, 2025 — Imec, a world-leading ...

Simulations indicate that integrating this contact module could improve the output power density by 70%, meeting the performance target for 6G user equipment. “Reducing contact resistance is crucial ...

Toshiba has launched the TBD62783A series of highly efficient transistor arrays, said to be the industry’s first with a DMOS FET type source-output driver. This series succeeds the TD62783 series of ...