The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Designed for life science applications, the PLT5 488HB_EP cyan laser diode from ams OSRAM delivers 300 mW of output power at 488 nm.

High-power semiconductor laser diodes represent a critical technology underpinning modern industrial, medical, and telecommunications applications. These devices convert electrical energy into ...

German partners launch DioHELIOS project as part of the Fusion 2040 program 31 Oct 2024 To boost performance of high-power laser diodes, a key component of future fusion power plants.

High-power broad-area diode lasers have emerged as a pivotal technology in modern photonics, combining high energy output with the benefits of semiconductor manufacturing. These devices employ ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power systems. The ...

SMC opens a second semiconductor fab in Nanjing, China. The new facility will produce high power and high voltage rectifiers and MOSFET wafers.

Now, Germany’s Fraunhofer Institute for Laser Technology (ILT) says it has made significant progress in high-power diode lasers. It has transferred the writing of fiber Bragg gratings from the world ...

Alpha and Omega Semiconductor Introduces an Ideal Diode Protection Switch with Limited Power Source (LPS) Feature as a Safeguard for Multiport USB-C Applications ...

Chinese power component manufacturers have raised prices for medium and low voltage MOSFETs and diodes; however, demand has yet to increase as anticipated, according to industry sources.