LSCT30PV120B9G is superior in silicon carbide full bridge with rectifier module. Its VDSS index reached 1200V. The model has On State Resistance of 88mΩ and a Total Gate Charge of 347nc.

With a typical power-conversion efficiency of 96%, the Flatpack2 HE rectifier module suits use in telecommunications applications. The 48/2000 ac/dc power rectifier provides a stand-alone 48V ...

A diode bridge rectifier on the auxiliary input with its two diode drops further exacerbates the wide range problem, especially at the lower end to 9.6V (= 10.8V – 1.2V). Sometimes the minimum voltage ...

Linear Technology Corporation announces the availability of a low loss 3-phase ideal diode bridge rectifier reference design, demonstrated on evaluation board DC2465. Conventional 3-phase rectifiers ...

The avalanche energy rated AK2S200-170 modules combine two fully... Semiconductor manufacturer, America Semiconductor, LLC, has released its high-voltage, Schottky rectifier modules.

Until now the most powerful diode phase-leg offered in a 34mm package type provides a permanent current of 224 Amps at a case temperature of 100 degrees C. With the new IXYS 34mm modules, this ...

This new module has a very low HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module ...

LSCT30PV120B9G is superior in silicon carbide full bridge with rectifier module. Its VDSS index reached 1200V. The model has On State Resistance of 88mΩ and a Total Gate Charge of 347nc. Thermal ...