The gate electrode wraps around the silicon pillar at even intervals, and a pre-formed nitride film for data-retention, set in each joint, functions as a NAND cell. According to Toshiba, its new array ...

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density ...

As you add more 3D NAND layers at a given cell density, the WL staircase also needs to lengthen and takes more space. For example, in the case of a 32-layer NAND device, the WL staircase stretches out ...

Finally, the peripheral logic is connected to the control gates. “3D NAND array is built with a gate-all-around (GAA) cell architecture. 3D NAND cells are ~20x larger in cell area and ~8x more ...

Second-generation multi-tier memory hole technology, improved engineering processes and other 3D NAND cell enhancements significantly increase cell array density horizontally across the wafer. WDC ...

The marketing people at Dell Inc. scored a major victory this morning after its SC Series became the first all-flash array family from a major vendor to support 3D NAND thanks to the introduction of ...

Here, bit storage density improvement has been enabled by reducing the dimensions of the floating gate cell. However, 2D-NAND scaling is saturated at about 15 nm half pitch, mainly because of array ...

Ahead of the Flash Memory Summit, Micron said it entered mass production with its most advanced triple-level-cell (TLC) 3D NAND flash with 232 layers, translating to a 1 TB maximum per die.

Traditional 2D NAND-based flash memory has been a workhorse of our digital storage economy, but its architecture has reached its physical limits, so suppliers are moving on to the next generation: 3D ...

Samsung today announced the first 3-bit per cell 3D NAND chip, ... (24 layer cells) last year, and rolled out its second-generation V-NAND (32-layer) cell array structure in May.

Intel didn't announce any products but confirmed it has made progress with Micron developing the third-generation 96-layer 3D NAND cell structure. The companies now have 64-layer QLC and 96-layer ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells ...